Design of Logic Gates Using CNTFETs

S.V.Srikanth, S.S.N.L. Venkateswara Rao, M.Murali Krishna

Carbon Nanotube (CNT) is one of the emerging nano technology, which is showing high efficiency and it has wide range of applications in many different streams. The properties of Carbon Nano Tube Field Effect Transistors (CNTFETs) have been studied and are observed to be the promising candidate for the integrated circuit (IC) devices. These are widely studied as possible successors to silicon MOSFETs. In this paper the standard model has been designed for, MOSFET-like CNTFET devices. Various logic gates were designed using CNTFETs; their delays are obtained and compared with CMOS. Hspice simulations have been performed on various logic gates that are designed using the modeled CNTFET.