Fabrication of TiO2 Doped ZnO UV Detector by Pulse Laser Deposition

Samar Y.AlDabagh, Kadhim.A.Aadim, Thura tariq abbas

In this work TiO₂ doped with ZnO(5% , 7%)  thin films were  grown by pulse laser deposition technique on P-type (Si)substrate  at RT under vacuum 10^-2 mbar. The properties of the photovoltaic detector with the increase of  ZnO concentration  is studied. All the films display photovoltaic in the near visible region. It was observed that the responsivity increased to 3.39 at  RT and to 3.82 after annealing  at 500 ºC with  the increase of ZnO concentrations from (5% to 7%).The Specific efficiency increases with the increase of ZnO concentration at  RT 10.9and after  annealing to 12.3.