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ISSN:2394-3661 | Crossref DOI | SJIF: 5.138 | PIF: 3.854

International Journal of Engineering and Applied Sciences

(An ISO 9001:2008 Certified Online and Print Journal)

Improvement of Crystallinity for F16CuPc Thin Film by DH-α6T Quasi-monolayer

( Volume 6 Issue 8,August 2019 ) OPEN ACCESS
Author(s):

Rongbin Ye, Yuya Sasaki

Abstract:

In this paper, we have reported on improvement of crystallinity for fluorinated copper phthalocyanine (F16CuPc) thin film by an α,α’-dihexylsexithiophene (DH-α6T) quasi-monolayer. By the detailed XRD and SEM analysis, highly ordering α-F16CuPc thin films could be deposited on SiO2/Si substrates modified by a DH-α6T quasi-monolayer. The F16CuPc/DH-α6T TFT worked in hole-enhancement and electron-depletion modes with their hole and electron mobilities of 4.10 x 10-2 cm2/Vs and 2.19 x 10-2 cm2/Vs, respectively. The bilayer device shows high electron mobility that is about 6 times greater than that of the single layer device, which originated from highly ordering and increasing of grain size of F16CuPc thin films deposited on a DH-α6T quasi-monolayer.

DOI DOI :

https://dx.doi.org/10.31873/IJEAS.6.8.2019.15

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