Improving Efficiency of an Amorphous Silicon (p-a-SiC:H/i-a-Si:H/n-a-Si:H) Solar Cell by Affecting Bandgap and Thickness from Numerical Analysis

Md. Feroz Ali, Md. Faruk Hossain

In this investigation hydrogenated amorphous silicon carbide (a-SiC:H) solar cell has been investigated and characterized by using the Analysis of Microelectronics and Photonic Structures (AMPS-1D) simulator. Although some works have been done to simulate this type of solar cell but by affecting the bandgap and thickness to improve the efficiency is the first time investigation which is reflected in this paper. The p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) with the thickness of 15 nm, the hydrogenated interface amorphous silicon (i-a-Si:H) with the thickness of 300 nm and the n-type hydrogenated amorphous silicon (i-a-Si:H) with the thickness of 15 nm are used to obtain the efficiency of 19.649% which is comparatively higher than the conventional Si solar cell’s efficiency (11%-14%). Most of the data of this simulation has been transferred to the graph.exe (a graph plotting software) to plot the characteristics curves. This paper provides a new approach of improving the efficiency of hydrogenated amorphous Silicon solar cell.