Simulation and Observation of Efficiency of p-n Homojunction Si Solar Cell with Defects and EBL by Using AMPS-1D

Md. Feroz Ali, Md. Faruk Hossain

In this work, p-n Si homojunction solar cell with defects and Electron Blocking Layer (EBL) has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. The optimum performance and efficiency has been investigated by changing the thickness of the p-layer and n-layer Si with bandgap and thickness and bandgap of both defects layer and EBL. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot some of the graph in this paper.  At the thickness of 4500 nm of each p-layer and n-layer Si with bandgap of 1.82 eV and 50 nm of both defects (1.82 eV bandgap) and EBL with 2.00 eV bandgap the maximum efficiency of 29.434% has been investigated and this type of solar cell has been proposed in order to fabricate and implement in laboratory which is reflected in this paper.